PART |
Description |
Maker |
K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
K9K1G08U0M-YCB0 K9K1G08U0M-YIB0 |
128M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9E2G08U0M-Y K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M- |
256M x 8 Bits NAND Flash Memory
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
TC5816BDC |
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
|
EDD1216AASE-7A-E EDD1216AASE EDD1216AASE-6B-E |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
EDS1232AATA-75L-E EDS1232AATA EDS1232AATA-60 EDS12 |
128M bits SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDS1216AGTA EDS1216AGTA-6B-E EDS1216AGTA-75-E |
128M bits SDRAM (8M words 】 16 bits)
|
Elpida Memory
|
EDS1232AASE-75L-E EDS1232AASE EDS1232AASE-60-E EDS |
128M bits SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|